Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor

Ab initio electron mobility and polar phonon scattering in GaAs

In polar semiconductors and oxides, the long-range nature of the electron-phonon (e-ph) interaction is a bottleneck to compute charge transport from first principles. Here, we develop an efficient ab initio scheme to compute and converge the e-ph relaxation times (RTs) and electron mobility in polar materials. We apply our approach to GaAs, where by using the Boltzmann equation with state-depen...

Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gatevoltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and...

Electron–polar optical phonon scattering suppression and mobility enhancement in wurtzite heterostructures

We have shown theoretically that the electron mobility in wurtzite AlN/GaN/AlN heterostructures can be enhanced by compensating the built-in electric field with the externally applied perpendicular electric field and by introducing a shallow InxGa1-xN channel in the center of GaN potential well. It was found that twoto fivefold increase of the room temperature electron mobility can be achieved....

Electron transport in nitrogen-polar high electron mobility transistors

Spatially probed electron-electron scattering in a two-dimensional electron gas

M. P. Jura,1,* M. Grobis,2,† M. A. Topinka,2,3,‡ L. N. Pfeiffer,4,§ K. W. West,4,§ and D. Goldhaber-Gordon2, 1Department of Applied Physics, Stanford University, Stanford, California 94305, USA 2Department of Physics, Stanford University, Stanford, California 94305, USA 3Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, USA 4Bell Labs, Alcatel-Lucen...